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IXTH30N50L2 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IXTH30N50L2
功能描述  N-Channel MOSFET Transistor
PDF  9 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IXTH30N50L2 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  IXTH30N50L2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 4Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 5Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 6Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 7Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 8Page - Inchange Semiconductor Company Limited IXTH30N50L2 Datasheet HTML 9Page - Inchange Semiconductor Company Limited  
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ISF1220
eq IXTH30N50L2
N-Channel MOSFET Transistor
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0, ID= 0.25mA
500
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 500V, VGS= 0
--
--
50
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V,VDS= 0
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 0.25mA
2.5
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 20V, ID= 15A
--
--
215
mΩ
gFS
Forward Transconductance
VDS =10V, ID=15A
--
12
--
S
Ciss
Input Capacitance
VGS=0V,
VDS=25V,
f=1.0MHZ
--
6072
--
pF
Coss
Output Capacitance
--
632
--
Crss
Reverse Transfer Capacitance
--
109
--
Qg
Total Gate Charge
VDD=250V,
ID=24A,
VGS=0 to 10V
--
153
--
nC
Qgs
Gate-Source Charge
--
41
--
Qgd
Gate-Drain Charge
--
86
--
td(on)
Turn-on Delay Time
VDD=250V,
ID=12A,
VGS=10V
RG=25Ω
--
140
--
ns
tr
Turn-on Rise Time
--
480
--
td(off)
Turn-off Delay Time
--
190
--
tf
Turn-off Fall Time
--
162
--



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