2-3
2
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF2126
HIGH POWER LINEAR AMPLIFIER
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device
is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals.
The part will also function as the final stage in transmitters requiring lin-
ear amplification operating between 400MHz and 2700MHz. The device
is packaged in an 8-lead plastic package with a backside ground. The
device is self-contained with the exception of the output matching network
and power supply feed line. It produces a typical output power level of 1W.
Features
Single 3V to 6.0V Supply
1.3W Output Power
12dB Gain
45% Efficiency
Power Down Mode
400MHz to 2700MHz Opera-
tion
Applications
2.5GHz ISM Band Applica-
tions
Digital Communication Sys-
tems
PCS Communication Systems
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
RF2126
High Power Linear Amplifier
RF2126PCK
Fully Assembled Evaluation Board
Rev A14 DS070511
RF2126High
Power Linear
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: SOIC-8 Slug
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