2-237
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
4
PWR SEN
3
BIAS GND2
2
RF IN
1
16
15
14
13
5
6
7
8
9
Bias
12
RF OUT
11
RF OUT
10
RF OUT
RF2163
3V, 2.5GHz LINEAR POWER AMPLIFIER
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Broadband Spread-Spectrum Systems
The RF2163 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread-spectrum transmitters. The
device is provided in a 16-pin leadless chip carrier with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 19dB Small Signal Gain
• High Power Added Efficiency
• Patent Pending Power Sense Technology
• 1800MHz to 2500MHz Frequency Range
RF2163
3V, 2.5GHz Linear Power Amplifier
RF2163 PCBA
Fully Assembled Evaluation Board
0
Rev A6 060301
12°
MAX
0.05
0.00
0.75
0.65
1.00
0.90
C
0.05
Dimensions in mm.
Shaded pin is lead 1.
A
4.00
2.00
1.50
SQ.
4.00
2
2.00
1.60
2 PLCS
0.10 C A
2 PLCS
0.10
C AB
M
3.20
2 PLCS
0.75
0.50
0.10 C B
2 PLCS
-B-
0.80
TYP
0.45
0.28
0.10 C A
2 PLCS
3.75
3.75
0.10 C B
2 PLCS
INDEX AREA
Package Style: QFN, 16-Pin, 4x4
RoHS Compliant & Pb-Free Product
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