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5-12
RF2422
Rev A6 060203
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
VDC
Input LO and RF Levels
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Carrier Input
T=25°C, VCC=5V
Frequency Range
800
2500
MHz
Power Level
-6
+6
dBm
Input VSWR
5:1
At 900MHz
1.8:1
At 1800MHz
1.2:1
At 2500MHz
Modulation Input
Frequency Range
DC
250
MHz
Reference Voltage (VREF)2.0
3.0
V
Maximum Modulation (I&Q)
VREF±1.0
V
Gain Asymmetry
0.2
dB
Quadrature Phase Error
3
°
Input Resistance
30
k
Ω
Input Bias Current
40
μA
RF Output
LO=2GHz and -5dBm, I&Q=2.0VPP, SSB
Output Power
-3
+3
dBm
Output Impedance
50
Ω
Output VSWR
3.5:1
At 900MHz
1.3:1
At 2000MHz
1.15:1
At 2500MHz
Harmonic Output
-30
-35
dBc
Sideband Suppression
25
35
dB
Carrier Suppression
30
35
dB
IM3 Suppression
30
35
dB
Intermodulation of the carrier and the
desired RF signal
25
30
dB
Intermodulation of baseband signals
Broadband Noise Floor
At 20MHz offset, VCC=5V.
Tied to VREF: ISIG, QSIG, IREF, and QREF.
-145
dBm/Hz
At 850MHz
-152
dBm/Hz
At 1900MHz
Power Down
Turn On/Off Time
100
ns
PD Input Resistance
50
k
Ω
Power Control “ON”
2.8
V
Threshold voltage
Power Control “OFF”
1.0
1.2
V
Threshold voltage
Power Supply
Voltage
5
V
Specifications
4.5
6.0
V
Operating Limits
Current
45
50
mA
Operating
25
μAPower Down
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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