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RF2484 数据表(PDF) 2 Page - RF Micro Devices

部件名 RF2484
功能描述  DIRECT QUADRATURE MODULATOR
PDF  10 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

RF2484 数据表(HTML) 2 Page - RF Micro Devices

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5-2
RF2484
Rev A7 061115
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
VDC
Input LO and RF Levels
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
LO Input
T=25°C, VCC=5V, VREF=4.1V; I and Q
driven single-ended
Frequency Range
800
2500
MHz
Power Level
-6
+6
dBm
Input Impedance
45-j95
Ω
At 880MHz
52-j54
Ω
At 1960MHz
58-j50
Ω
At 2140MHz
63-j40
Ω
At 2400MHz
Modulation Input
Frequency Range
DC
250
MHz
Reference Voltage (VREF)4.1
V
Input Resistance
30
k
Ω
Input Bias Current
40
μA
RF Output (880MHz)
LO= -5dBm at 880MHz; Single sideband
testing unless otherwise noted
CDMA Output Channel Power
-12
dBm
For ACPR=-72dBc; I&Q Amplitude=1.1VPP
(single-ended)
CDMA ACPR
-72
dBc
Channel Power=-12dBm; see Test Setup for
detailed information
Carrier Suppression
50
dBc
T=25°C; POUT=-10dBm; optimized I,Q DC
offsets
Carrier Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT=-10dBm
Sideband Suppression
50
dBc
T=25°C; POUT=-10dBm; optimized I,Q
amplitude and phase balance
Sideband Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT=-10dBm
Broadband Noise Floor
-152.5
dBm/Hz
At 20MHz offset, 30kHz res BW, VCC=5V;
ISIG, QSIG, IREF, and QREF tied to VREF
EVM
2.3
%
See Test Setup for detailed information
Phase Error
1
° RMS
See Test Setup for detailed information
Rho
.9993
See Test Setup for detailed information
Output Impedance
28-j72
Ω
RF Output (1960MHz)
LO=-5dBm at 1960MHz; Single sideband
testing unless otherwise noted
PCS CDMA Output Power
-13
dBm
For ACPR=-72dBc; I&Q Amplitude=1.2VPP
(single-ended)
PCS CDMA ACPR
-72
dBc
Channel Power=-13dBm; see Test Setup for
detailed information
Carrier Suppression
50
dBc
T=25°C; POUT=-13dBm; optimized I,Q DC
offsets
Carrier Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT=-13dBm
Sideband Suppression
50
dBc
T=25°C; POUT=-13dBm; optimized I,Q
amplitude and phase balance
Sideband Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT=-13dBm
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).



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