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5-52
RF2850
Rev A0 050616
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.3
V
LO Input
+10
dBm
Operating Temperature
-40 to +85
°C
Storage Temperature
-65 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Band Performance (1900MHz) with CW Baseband Inputs
LO Input Port
LO Drive Level
-5
dBm
LO Input Impedance
50
Ω
LO Port Return Loss
13
dB
Modulation Input
Frequency Range
DC
250
MHz
Reference Voltage
2.05
V
Baseband common mode voltage
Baseband Input Level
0.25
VP-P
0.25VP-P per pin, 500mV VP-P differential,
I/Q in quadrature
I/Q Signal
200
kHz
CW baseband signal
Input Impedance
40
k
Ω
Measured at DC
Bandwidth (-1dB)
130
MHz
500mV VP-P differential, I/Q at 2.05V DC
Input Bias Current
40
μA
I/Q Modulator Output
RF Frequency Range
1700
2500
MHz
T=25°C, VCC=5V
RF Output Power
-6
dBm
RF Output Return Loss
15
dB
RF Output P1dB
4
5
dBm
Carrier Suppression
20
25
dBc
Unadjusted (see note)
Carrier Suppression
35
55
dBc
Adjusted. T=-40°C to +85°C
Sideband Suppression
30
45
dBc
Unadjusted
IM3 Suppression
52
dBc
Two tone baseband input @ 500mVP-P dif-
ferential per tone
Output IP3
15
20
dBm
Broadband Noise Floor
-158
-156
dBm/Hz
20MHz offset from LO, all IQ input at bias of
2.05V
DC Parameters
Supply Voltage
5.0
V
Specification
4.75
5.25
V
Operating limits
Supply Current
60
mA
Note: 20dBc limit for unadjusted carrier suppression is applicable for differential I and Q inputs only.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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