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GC10MPS12-252 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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GC10MPS12-252 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCD7019 eq GC10MPS12-252 Silicon Carbide Schottky Diode www.iscsemi.com 1 FEATURES · High Avalanche (UIS) Capability · Low Thermal Resistance · Extremely Fast Switching Speeds APPLICATIONS · Boost Diode in Power Factor Correction (PFC) · Motor Drives · Uninterruptible Power Supply (UPS) · Switched Mode Power Supply (SMPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRSM Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage 1200 V IF Continuous Forward Current TC = 25 °C, D = 1 49 A TC = 135 °C, D = 1 24 A TC = 165 °C, D = 1 10 A IFSM Non-Repetitive Forward Surge Current Tc=25°C,tP=10 ms,Half Sine Wave 80 A Tc=150°C,tP=10 ms,Half Sine Wave 64 A IFRM Repetitive Peak Forward Surge Current Tc=25°C,Tp=10ms,Half Sine Wave 48 A Tc=150°C,Tp=10ms,Half Sine Wave 34 A IFM Non-repetitive peak forward current Tc=25°C,Tp=10us 400 A I2T I2t Value Tc=25°C,Tp=10ms 32 A2S dV/dt Diode Ruggedness VR = 0 ~ 960 V 200 V/ns Ptot Power Dissipation Tc=25°C 300 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ |
类似零件编号 - GC10MPS12-252 |
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类似说明 - GC10MPS12-252 |
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