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GC10MPS12-252 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 GC10MPS12-252
功能描述  Silicon Carbide Schottky Diode
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

GC10MPS12-252 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCD7019
eq GC10MPS12-252
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
·
High Avalanche (UIS) Capability
·
Low Thermal Resistance
·
Extremely Fast Switching Speeds
APPLICATIONS
·
Boost Diode in Power Factor Correction (PFC)
·
Motor Drives
·
Uninterruptible Power Supply (UPS)
·
Switched Mode Power Supply (SMPS)
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRSM
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
TC = 25
°C, D = 1
49
A
TC = 135
°C, D = 1
24
A
TC = 165
°C, D = 1
10
A
IFSM
Non-Repetitive Forward Surge
Current
Tc=25°C,tP=10 ms,Half Sine Wave
80
A
Tc=150°C,tP=10 ms,Half Sine Wave
64
A
IFRM
Repetitive Peak Forward Surge
Current
Tc=25°C,Tp=10ms,Half Sine Wave
48
A
Tc=150°C,Tp=10ms,Half Sine Wave
34
A
IFM
Non-repetitive peak forward current
Tc=25°C,Tp=10us
400
A
I2T
I2t Value
Tc=25°C,Tp=10ms
32
A2S
dV/dt
Diode Ruggedness
VR = 0 ~ 960 V
200
V/ns
Ptot
Power Dissipation
Tc=25°C
300
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃


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