SP6648_06 datasheet(2/16 Pages) SIPEX

2 / 16 page

Date: 6/7/06 Rev B

SP6648 Ultra-low Quiescent Current, High Efficiency Boost Regulator

LX, Vo, VBATT , LBON, FB to GND pin ................................ -0.3 to 6.0V

SHDN, LBI ........................................................... -0.3V to VBATT +1.0V

Vo, GND, LX Current ....................................................................... 2A

Reverse VBATT Current .............................................................. 220mA

Forward VBATT Current .............................................................. 500mA

Storage Temperature .................................................. -65 °C to 150°C

PARAMETER

MIN

TYP

MAX

UNITS

♦

CONDITIONS

Input Voltage Operating Range, VBATT

0.7

4.5

♦

After Startup

Output Voltage Range, VOUT

2.5

5.5

♦

Start-up Input Voltage, VBATT

0.85

1.1

♦

RLOAD = 3kΩ

Under Voltage Lock-out/UVLO

0.5

0.61

0.7

♦

Output Voltage, VO

3.12

3.30

3.48

♦

Internal Feedback Divider

Quiescent Current into VO, IQO

μA

♦

VOUT = 3.3V, VFB = 1.5V, Toggle SHDN

Quiescent Current into VBATT, IQB

250

750

♦

VOUT = 3.3V, VFB = 1.5V

Shutdown Current into VO, ISDO

500

♦

VSHDN = 0.0V

Shutdown Current into VBATT, ISDB

250

750

♦

VSHDN = 0.0V, VBATT = 2.6V

Efficiency

VBATT = 1.3V, IOUT = 100mA, RLIM =2kΩ

VBATT = 2.6V, IOUT = 200mA, RLIM =2kΩ

Inductor Current Limit, IPK = 1600/RLIM

650

800

1000

♦

RLIM = 2kΩ

1300

1600

2000

♦

RLIM = 1kΩ

100

VBATT = 1.3V, RLIM = 4kΩ

Output Current

200

VBATT = 2.6V, RLIM = 4kΩ

150

VBATT = 1.3V, RLIM =2kΩ

400

VBATT = 2.6V, RLIM =2kΩ

Minimum Off-Time Constant KOFF

0.5

1.0

1.5

V*μs

♦

KOFF ≤ TOFF (VOUT- VBATT)

Maximum On-Time Constant KON

2.5

4.0

5.5

V*μs

♦

KON ≥ TON (VBATT)

Enable Valid to Output Stable

300

500

μsILOAD = 1mA

NMOS Switch Resistance

0.30

0.6

Ω♦

INMOS = 100mA

PMOS Switch Resistance

0.30

0.6

Ω♦

IPMOS = 100mA

FB Set Voltage, VFB

1.19

1.25

1.31

♦

External feedback

FB Input Current

100

♦

VFB =1.3V

LBI Falling Trip Voltage

0.56

0.61

0.66

♦

LBI Hysteresis

Low Output Voltage for LBON, VOL

0.4

♦

VBATT = 1.3V, ISINK = 1mA

Leakage current for LBON

μA

♦

VBATT = 1.3V, VLBON = 3.3V

SHDN Input Voltage, Note 1

VIL

0.25

♦

VBATT = 1.3V

VIH

1.0

♦

VBATT = 1.3V

VIL

0.5

♦

VBATT = 2.6V

VIH

2.0

♦

VBATT = 2.6V

SHDN Input Current

100

♦

LX Pin Leakage

μA

ELECTRICAL SPECIFICATIONS

VBATT =VSHDN = 2.6V, VFB=0.0V, ILOAD = 0mA, TAMB = -40°C to +85°C, VOUT = +3.3V, typical values at 27°C unless

otherwise noted. The ♦ denotes the specifications which apply over full operating temperature range -40°C to +85°C, unless

otherwise specified.

Operating Temperature ................................................ -40°C to +85°C

ESD Rating ........................................................................ 1.5kV HBM

These are stress ratings only and functional operation of the device at

these ratings or any other above those indicated in the operation sections

of the specifications below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may affect reliability.

ABSOLUTE MAXIMUM RATINGS

Note 1: SHDN must transition faster than 1V/100mS for proper operation.

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