4-558
RF3315
Rev A10 050318
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
250
mA
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Max. TJ (MTTF>100years)
165
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
AC Specifications (2GHz)
VCC=5V, RFIN=-10dBm, Freq=2.0GHz,
with 2GHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
11.0
12.5
dB
F=2GHz
Input Return Loss
15
dB
F=2GHz
Output Return Loss
15
dB
F=2GHz
Output IP3
+36
+40.0
dBm
F1= 1.99GHz, F2=2.00GHz, PIN=-5dBm
Output P1dB
+21
+23.0
dBm
Noise Figure
3.0
4.0
dB
AC Specifications
(900MHz)
VCC=5V, RFIN=-10dBm, Freq=900MHz,
with 900MHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
16
18
dB
Input Return Loss
20
dB
Output Return Loss
20
dB
Output IP3
+36
+41
dBm
F1= 900MHz, F2=901MHz, PIN=-10dBm
Output P1dB
+23
+25
dBm
Noise Figure
2.5
3.5
dB
Thermal
ICC=150mA, PDISS=770mW. (See Note.)
ThetaJC
88
°C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
154
°C
TCASE=+85°C
Mean Time To Failure
370
years
TCASE=+85°C
DC Specifications
Device Voltage
4.5
5.0
5.5
V
ICC=150mA
Operating Current Range
100
150
170
mA
VCC=5V
Note: The RF3315 must be operated at or below 170mA to ensure the highest possible reliability and electrical performance.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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