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SDR952Z 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SDR952Z 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR950 __ __ __ + Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level ¦ ¦ ¦ ¦ ¦ + Leg Bend Option (See Figure 1) ¦ ¦ ¦ ¦ ¦ ¦ ¦ + Package M = TO-254, Z = TO-254Z SDR950M & Z Thru SDR952M & Z 50A, 35nsec typ., 100-200 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 50nsec Maximum 3/ • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach • Ultrasonic Aluminum Wire Bonds • Higher Voltages and Faster Recovery Times Available, Contact Factory • Ceramic Seal for Improved Hermeticity Available • TX, TXV, and S-Level Screening Available 2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse Voltage SDR950M & Z SDR951M & Z SDR952M & Z VRRM VRWM VR 100 150 200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/ Io 50 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, or equivalent DC) 4/ IFSM 350 Amps Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Maximum Total Thermal Resistance Junction to Case 4/ RθJC 0.85 ºC/W - Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF =10 Amp, di/dt = 200A/µs 4/ Pins 2 and 3 Tied Together. 5/ TC = 150°C, Derate to 0A @ 200°C. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0039K DOC |
类似零件编号 - SDR952Z |
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类似说明 - SDR952Z |
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