2-655
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
5
6
7
8
9
4
3
2
1
10
11
12
Input
Match
Output
Match
Bias
Interstage
Match
PWR SEN
BIAS1GND
RF IN
NC
RF OUT
RF OUT
RF5189
3V, 2.45GHz LINEAR POWER AMPLIFIER
• IEEE802.11B WLAN Applications
• 2.5GHz ISM Band Applications
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
The RF5189 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
12-pin QFN package with a backside ground. The
RF5189 is designed to maintain linearity over a wide
range of supply voltage and power output. The RF5189 is
designed to reduce end-product BOM count by integrat-
ing all matching circuitry onto the chip.
• Single Power Supply 3.0V to 5.0V
• +30dBm Saturated Output Power
• 25dB Small Signal Gain
• High Linearity
• 2400MHz to 2500MHz Frequency Range
RF5189
3V, 2.45GHz Linear Power Amplifier
RF5189 PCBA
Fully Assembled Evaluation Board
0
Rev A7 060127
Shaded areas represent pin 1.
Dimensions in mm.
0.08 C
0.1 C
C
0.925
0.775
0.102
REF
0.203
REF
2 PLCS
0.15 C
2 PLCS
0.15 C
Pin 1
ID
A
3.00
B
3.00
1.55
1.35
0.45
0.25
TYP
0.10
C A B
M
1.45
Pin 1
ID
0.50 TYP
0.05
Package Style: QFN, 12-Pin, 3x3
RoHS Compliant & Pb-Free Product
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