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SHF1104 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SHF1104 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 40 nsec maximum • PIV to 900 Volts, Consult Factory • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Replaces UES 1104, UES1106, IN6624 • TX, TXV, S Level screening Available SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS 1 AMP 400 - 900 V Hyper Fast Rectifier Axial Lead Diode SMS Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SHF1104 SHF1106 SHF1108 SHF1109 VRRM VRSM VR 400 600 800 900 Volts Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Io 1.0 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 20 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs RθJE 35 28 ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111E DOC |
类似零件编号 - SHF1104 |
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类似说明 - SHF1104 |
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