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SDR1AHFSMS 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SDR1AHFSMS 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • Hyper Fast Recovery: 35 nsec maximum • PIV to 1200 Volts • Hermetically Sealed • Void Free Construction • For High Efficiency Applications • Single Chip Construction • Low Reverse Leakage • TX, TXV, S Level screening Available SDR1AHF & SDR1AHFSMS thru SDR1NHF & SDR1NHFSMS 1 AMP 50 - 1200 V 35 nsec Hyper Fast Rectifier Axial Lead Diode SMS Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR1AHF SDR1BHF SDR1DHF SDR1GHF SDR1JHF SDR1KHF SDR1MHF SDR1NHF VRRM VRSM VR 50 100 200 400 600 800 1000 1200 Volts Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Io 1.0 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 25 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs RθJE 35 28 ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0119C DOC |
类似零件编号 - SDR1AHFSMS |
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类似说明 - SDR1AHFSMS |
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