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SSR2008Z 数据表(PDF) 2 Page - Solid States Devices, Inc |
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SSR2008Z 数据表(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS 2/ (per leg) Symbol Max Unit Instantaneous Forward Voltage Drop (300 - 500 µs Pulse) IF = 10 A IF = 15 A IF = 20 A VF1 VF2 VF3 0.75 0.82 0.85 Volts Instantaneous Forward Voltage Drop (TA = -55 °C, 300 - 500 µs Pulse) IF = 10 A VF4 0.85 Volts Reverse Leakage Current (Rated VR, 300 µs pulse minimum) TA = 25 °C TC = 100 °C IR1 IR2 200 10 µA mA Junction Capacitance (VR = 10 V, f = 1MHz, TA = 25 °C) CJ 800 pF CASE OUTLINE: TO-254 (Suffix M) PIN 1 PIN 3 PIN 2 CASE OUTLINE: TO-254Z (Suffix Z) PIN 1 PIN 2 PIN 3 OPTIONAL LEAD BEND CONFIGURATION SUFFIX MD & ZD SUFFUX MU & ZU PIN ASSIGNMENT FUNCTION PIN 1 PIN 2 PIN 3 Rectifier 4/ Cathode Anode Anode NOTE: 4/ Pins 2 and 3 externally connected for best performance. Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2008M, SSR2008Z SSR2009M, SSR2009Z SSR2010M, SSR2010Z NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0091H DOC |
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