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SDR998CT/3 数据表(PDF) 2 Page - Solid States Devices, Inc |
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SDR998CT/3 数据表(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0115B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR998CT/3 thru SDR9912CT/3 Electrical Characteristics Symbol Min Max Units Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) IF = 25Adc IF = 50Adc VF1 –– 1.85 2.1 Volts Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) IF = 25Adc IF = 25Adc VF2 –– 1.75 1.9 Volts Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) IR1 –– 100 µA Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) IR2 –– 10 mA Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ –– 100 pF Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) TA = 25ºC trr –– 80 nsec Case Outline: TO-3 Pin1: Cathode Pin2: Anode 1 Pin3: Anode 2 1.197 1.177 Ø.875 MAX 2x .043 .038 .675 .655 .525 MAX .135 MAX .440 .420 2x .225 .205 .450 .250 2x .312 MIN 2x Ø .165 .151 2x R.188 MAX SEATING PLANE 2 1 |
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