NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0019C

DOC

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT6678 SERIES

Electrical Characteristics

Symbol

Min

Max

Units

Collector Cutoff Current

-

-

0.1

1.0

mA

Collector – Base Leakage Current

-

1

mA

Emitter Cutoff Current

-

2

mA

Collector-Emitter Sustaining Voltage

(IC = 200mA, IB = 0)

400

-

DC Current Gain *

VCE=3V, 1C=15A, TA= 25°C

VCE=3V, 1C=1A, TA= 25°C

VCE=3V, 1C=15A,TA= -55°C

8

15

4

-

-

-

Base-Emitter Saturation Voltage *

-

1.5

Collector-Emitter Saturation Voltage *

(IC = 15A, IB = 3A)

(TC = 25°C)

(TC = 100°C)

1.5

2.0

Second Breakdown

(t = 1.0 sec, TC = 25oC)

(VCC = 11.7V)

(VCC = 20V)

(VCC = 100V)

15.0

8.75

0.3

-

-

-

A

A

A

Reverse Bias Second Breakdown

(VBE (off) = 1 to 6V, VCLAMP = 450V, TC < 100

o

C)

RBSOA

15.0

-

A

Current Gain

(IC = 1A, VCE = 10VDC, f = 5MHz)

3

10

Output Capacitance

(VCB = 10VDC , f = 0.1MHz)

150

500

pF

Delay Time

Storage Time

Rise Time

Fall Time

––

––

0.1

0.6

2.5

0.5

µsec

Cross Over Time

––

0.5

µsec

NOTES:

* Pulse Test: Pulse Width = 300

µs, Duty Cycle < 2%

1/

For Ordering Information, Price, and Availability Contact Factory.

2/

Screening per MIL-PRF-19500.

3/

For Package Outlines Contact Factory.

4/

Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only.