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STM8057 数据表(PDF) 2 Page - Solid States Devices, Inc |
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STM8057 数据表(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 tp SOLID STATE DEVICES, INC. STM8057 Notes: 1. All voltages are measured with automated test set using 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured value due to the heat- ing effects. 2. Current Pulse rises to peak value of IPP in 10µsec and decay to half value, IPP/2, in 1msec. 3. Pulse width (tP) is defined as the time from peak pulse current IPP to the point where peak pulse current decayed to 50% of rated IPP. (10µsec x 100µsec wave form as defined by R.E.A.) TIME (ms) Electrical Characteristics SYMBOL UNITS MAX V(pk) Clamping Voltage (IPP = 120A(pk), tR = 10µsec, tP = 1000µsec) 1000 VC Breakdown Voltage (IBR = 15mA, TA = 25 oC, 300 µsec pulse minimum) -VDC VBR1 IR2 µΑ µΑ µΑ µΑ µΑ 200 Reverse Leakage Current (VWM = 800V, TA = 0 oC, 300 µsec pulse minimum) Reverse Leakage Current (VWM = 800V, TA = 25 oC, 300 µsec pulse minimum) µΑ µΑ µΑ µΑ µΑ 100 IR1 MIN - 840 - - Breakdown Voltage (IBR = 15mA, TA = 0 oC, 300 µsec pulse minimum) -VDC VBR2 810 Package Outline: 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Note: This Surface to be Flush to +.005" underflush with Plane -A-. |
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