数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

IRFE9130 数据表(PDF) 2 Page - International Rectifier

部件名 IRFE9130
功能描述  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFE9130 数据表(HTML) 2 Page - International Rectifier

  IRFE9130 Datasheet HTML 1Page - International Rectifier IRFE9130 Datasheet HTML 2Page - International Rectifier IRFE9130 Datasheet HTML 3Page - International Rectifier IRFE9130 Datasheet HTML 4Page - International Rectifier IRFE9130 Datasheet HTML 5Page - International Rectifier IRFE9130 Datasheet HTML 6Page - International Rectifier IRFE9130 Datasheet HTML 7Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
IRFE9130
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction to Case
5.0
RthJ-PCB
Junction to PC Board
19"""
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-6.5
ISM
Pulse Source Current (Body Diode) ➀
-25
VSD
Diode Forward Voltage
-4.3
V
Tj = 25°C, IS = -6.5A, VGS = 0V ➃
trr
Reverse Recovery Time
250
nS
Tj = 25°C, IF = -6.5A, di/dt ≤-100A/µs
QRR
Reverse Recovery Charge
3.0
µc
VDD ≤ -50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.10
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.30
VGS = -10V, ID = -4.1A➃
Resistance
0.345
VGS = -10V, ID = -6.5A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
1.9
S ( )
VDS > -15V, IDS = -4.1A➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -80V, VGS= 0V
-250
VDS = -80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS =20V
Qg
Total Gate Charge
3 5
VGS =-10V, ID= -6.5A
Qgs
Gate-to-Source Charge
6.8
nC
VDS =-50V
Qgd
Gate-to-Drain (‘Miller’) Charge
2 3
td(on)
Turn-On Delay Time
6 0
VDD =-50V, ID = -6.5A,
t r
Rise Time
140
RG =7.5Ω
td(off)
Turn-Off Delay Time
140
tf
Fall Time
140
LS + LD
Total Inductance
Ciss
Input Capacitance
790
VGS = 0V, VDS = -25V
Coss
Output Capacitance
340
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
7 1
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad



Html Pages

1 2 3 4 5 6 7


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com