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IRFS3307ZPBF 数据表(PDF) 1 Page - International Rectifier |
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IRFS3307ZPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 11 page  05/31/07 Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET GD S Gate Drain Source S D G D S G D S D G TO-220AB IRFB3307ZPbF D2Pak IRFS3307ZPbF TO-262 IRFSL3307ZPbF S D G D Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.65 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak jk ––– 40 300 Max. 120 c 88 c 480 75 140 75 23 230 6.7 -55 to + 175 ± 20 1.5 10lb xin (1.1Nxm) PD - 97214B VDSS 75V RDS(on) typ. 4.6m : max. 5.8m : ID (Silicon Limited) 120Ac ID (Package Limited) 75A |
类似零件编号 - IRFS3307ZPBF |
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类似说明 - IRFS3307ZPBF |
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