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WSI10040L-R24M 数据表(PDF) 7 Page - AiT Semiconductor Inc. |
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WSI10040L-R24M 数据表(HTML) 7 Page - AiT Semiconductor Inc. |
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7 / 17 page ![]() AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR REV1.1 - 7 - Part Number Inductance (uH) DCR (mΩ) Typ. DCR (mΩ)Max. Isat (A) Max. Irms (A) Max. WSI06030L-1R0M 1.00 7.60 8.00 9.50 12.50 WSI06030L-1R5M 1.50 11.70 12.50 8.00 10.50 WSI06030L-2R2M 2.20 15.70 16.50 7.00 9.00 WSI06030L-3R3M 3.30 24.80 26.00 6.50 7.00 WSI06030L-4R7M 4.70 31.80 33.40 4.00 6.00 WSI06030L-6R8M 6.80 44.60 46.80 4.00 5.50 WSI06030L-8R2M 8.20 52.30 54.90 4.00 5.00 WSI06030L-100M 10.00 67.80 71.20 3.50 4.00 WSI06030L-150M 15.00 110.00 125.00 3.00 3.50 WSI06030L-220M 22.00 128.90 135.00 2.50 2.90 * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% Part Number Inductance (uH) DCR (mΩ) Typ. DCR (mΩ)Max. Isat (A) Max. Irms (A) Max. WSI06040J-R22M 0.22 2.00 2.40 34.00 23.00 WSI06040J-R33M 0.33 3.00 3.40 30.00 18.00 WSI06040J-R36M 0.36 3.60 4.30 28.00 18.00 WSI06040J-R47M 0.47 3.80 4.50 27.00 17.00 WSI06040J-R50M 0.50 2.80 3.40 21.00 20.00 WSI06040J-R56M 0.56 4.30 5.00 20.00 16.00 WSI06040J-R68M 0.68 4.50 5.00 20.00 16.00 WSI06040J-R82M 0.82 5.50 6.60 17.00 13.00 WSI06040J-1R1M 1.10 4.60 5.50 19.00 15.30 WSI06040J-1R5M 1.50 8.00 10.00 13.00 11.50 WSI06040J-2R2M 2.20 9.80 12.00 11.00 11.00 WSI06040J-3R3M 3.30 12.50 16.00 10.00 10.00 WSI06040J-4R7M 4.70 18.40 24.00 8.00 6.70 WSI06040J-5R6M 5.60 21.00 29.00 8.00 6.30 WSI06040J-6R8M 6.80 29.00 33.00 7.00 6.00 WSI06040J-8R2M 8.20 34.00 39.00 5.50 5.00 WSI06040J-100M 10.00 42.50 45.00 5.00 4.10 WSI06040J-120M 12.00 46.30 53.00 5.00 4.00 * Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient * M=Tolerance=±20% * Irms: Rated Current Loading when temperature rise approximately 40℃. * Isat: Saturated Current measured at the point of L drop approximately 20% |
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