2019/10/2

p.1

EMBA2N10AS

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

17

A

TC = 100 °C

11

Pulsed Drain Current1

IDM

68

Avalanche Current

L = 0.01mH

IAS

2.5

Avalanche Energy

L = 1.0mH

EAS

3.0

mJ

Repetitive Avalanche Energy2

L = 0.5mH

EAR

1.5

Power Dissipation

TC = 25 °C

PD

50

W

TC = 100 °C

20

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

RJC

2.5

°C / W

Junction-to-Ambient

RJA

75

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

375°C / W when mounted on a 1 in2 pad of 2 oz copper.

N-CH

BVDSS

100V

RDSON (MAX.)@VGS=10V

100mΩ

RDSON (MAX.)@VGS=4.5V

150mΩ

ID @TC=25℃

17A