2019/8/7

p.2

EMF44P03JS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250A

-30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250A

-0.3 -0.75

-1.2

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±12V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

A

VDS = -20V, VGS = 0V, TJ = 125 °C

-10

On-State Drain Current1

ID(ON)

VDS = -5V, VGS = -4.5V

-4

A

Drain-Source On-State Resistance1

RDS(ON)

VGS = -10V, ID = -4.5A

32

38

mΩ

VGS = -4.5V, ID = -4A

39

44

VGS = -2.5V, ID = -3A

60

75

Forward Transconductance1

gfs

VDS = -5V, ID = -4A

13

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -15V, f = 1MHz

1170

pF

Output Capacitance

Coss

185

Reverse Transfer Capacitance

Crss

137

Total Gate Charge1,2

Qg

VDS = -15V, VGS = -4.5V,

ID = -4A

14.2

nC

Gate-Source Charge1,2

Qgs

3.2

Gate-Drain Charge1,2

Qgd

4.1

Turn-On Delay Time1,2

td(on)

10

nS

Rise Time1,2

tr

VDS = -15V,

10

Turn-Off Delay Time1,2

td(off)

ID = -1A, VGS = -4.5V, RGS = 6Ω

45

Fall Time1,2

tf

15

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

-4

A

Pulsed Current3

ISM

-16

Forward Voltage1

VSD

IF = IS, VGS = 0V

-1.2

V

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

EMC will review datasheet by quarter, and update new version.