©2006 Silicon Storage Technology, Inc.

S71318-00-000

12/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 29 dB gain across 2.4-2.5 GHz

– Typically 29-26 dB gain across 4.9-5.8 GHz

•

High linear output power:

– >25 dBm P1dB (Pulsed single-tone signal) across

2.4-2.5 GHz

– Meets 802.11b OFDM ACPR requirement up to

23.5 dBm across 2.4-2.5 GHz

– Meets 802.11g OFDM ACPR requirement up to

23 dBm across 2.4-2.5 GHz

– Added EVM ~4% up to 19 dBm for

54 Mbps 802.11g signal across 2.4-2.5 GHz

– >24 dBm P1dB across 4.9-5.8 GHz

– Meets 802.11a OFDM ACPR requirement up to

22.5 dBm across 4.9-5.8 GHz

– Added EVM ~4% up to 18 dBm for

54 Mbps 802.11a signal across 4.9-5.8 GHz

•

High power-added efficiency/Low operating

current for 802.11a/b/g applications

•

•

High-speed power-up/down

– Turn on/off time (10%-90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

across 2.4-2.5 GHz

– ~3/1 dB gain/max linear power variation between

0°C to +85°C across 4.9-5.8 GHz

– ±0.5 dB detector variation between 0°C to +85°C

•

Low shut-down current (< 2 µA)

•

20 dB dynamic range on-chip power detection

•

Built-in input/output matching

•

Packages available

– 16-contact LGA package (4mm x 4mm)

•

All non-Pb (lead-free) devices are ROHS compliant.

APPLICATIONS:

•

WLAN (IEEE 802.11a/g/b)

•

Japanese WLAN

•

HyperLAN2

•

Multimedia

•Home RF

•

Cordless phones

PRODUCT DESCRIPTION

The SST13LP05 is a fully matched, dual-band power

amplifier module (PAM) based on the highly-reliable InGaP/

GaAs HBT technology. This PAM provides excellent RF

performance, temperature-stable power detectors, and

low-current

analog

on/off

control

interfaces.

The

SST13LP05 provides stable RF and power detector perfor-

ultra-low shut-down current.

With a near-zero Rest of Bill of Materials (RBOM), the

SST13LP05 is designed for 802.11a/b/g applications cov-

ering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for

U.S., European, and Japanese markets.

The SST13LP05 has excellent linearity, typically 4% added

Error Vector Magnitude (EVM) at 19 dBm output power.

This output power is essential for 54 Mbps 802.11g opera-

tion while meeting 802.11g spectrum mask at 23 dBm and

802.11b spectrum mask at 23.5 dBm. For 802.11a opera-

tion, the SST13LP05 typically demonstrates <4% added

EVM at 18 dBm output power while meeting 802.11a spec-

trum mask at 22.5 dBm.

The SST13LP05 also has wide-range (>20 dB), tempera-

ture-stable (±0.5 dB across 0°C to +85°C), directionally-

coupled, power detectors which provide a reliable and cost-

effective solution to board-level power control. The device’s

analog on/off control can be driven by an analog or digital

control signal from either a transceiver or baseband chip.

These features, coupled with low operating current, make

the SST13LP05 ideal for the final stage power amplifica-

tion in both battery-powered 802.11a/b/g WLAN trans-

mitters and access point applications.

The SST13LP05 is offered in a 16-contact LGA package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module

SST13LP05

SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier