©2006 Silicon Storage Technology, Inc.

S71321-00-000

5/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 29 dB gain across 2.4–2.5 GHz over

temperature 0°C to +85°C

•

High linear output power:

– >26 dBm P1dB

- Please refer to “Absolute Maximum Stress

Ratings” on page 4

– Meets 802.11g OFDM ACPR requirement up to

22 dBm

– ~2.5% added EVM up to 19 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 22 dBm

•

High power-added efficiency/Low operating

current for both 802.11g/b applications

•

•

Low idle current

•

High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

Excellent On-chip power detection

– <+/- 0.3dB variation between 0°C to +85°C

– <+/- 0.4dB variation with 2:1 VSWR mismatch

– <+/- 0.3dB variation Ch1 through Ch14

•

20 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 16-contact VQFN – 3mm x 3mm

•

All non-Pb (lead-free) devices are RoHS compliant

APPLICATIONS:

•

WLAN (IEEE 802.11g/b)

•Home RF

•

Cordless phones

•

2.4 GHz ISM wireless equipment

PRODUCT DESCRIPTION

The SST12LP07 is a versatile power amplifier based on

the highly-reliable InGaP/GaAs HBT technology.

The SST12LP07 can be easily configured for high-power

applications with good power-added efficiency while oper-

ating over the 2.4- 2.5 GHz frequency band. This device

typically provides 29 dB gain with 22% power-added effi-

The SST12LP07 has excellent linearity, typically ~2.5%

added EVM at 19 dBm output power which is essential for

54 Mbps 802.11g/n operation while meeting 802.11g spec-

trum mask at 22 dBm. The SST12LP07 can also be config-

ured for high-efficiency operation, typically 17 dBm linear 54

Mbps 802.11g output power at 85 mA total power con-

sumption. High-efficiency operation is desirable in embed-

ded applications such as in hand-held units.

The SST12LP07 also features easy board-level usage

along with high-speed power-up/down control through a

single combined reference voltage pin. Ultra-low reference

ble by an on/off switching signal directly from the baseband

chip. These features coupled with low operating current

make the SST12LP07 ideal for the final stage power ampli-

fication in battery-powered 802.11g/b WLAN transmitter

applications.

The SST12LP07 has an excellent on-chip, single-ended

power detector, which features wide-range (~20 dB) with

dB-wise linearization and high stability over temperature (<

+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across

Channels 1 through 14), and output load (<+/-0.4 dB

with 2:1 output VSWR all phases). The excellent on-

chip power detector provides a reliable solution to

board-level power control.

The SST12LP07 is offered in a 16-contact VQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP07

SST12LP072.4 GHz High Gain High Power PA