©2007 Silicon Storage Technology, Inc.

S71353-00-000

02/07

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 32 dB gain across 2.4~2.5 GHz over

temperature 0°C to +85°C

•

High linear output power:

– >26 dBm P1dB

- Please refer to “Absolute Maximum Stress

Ratings” on page 4

– Meets 802.11g OFDM ACPR requirement up to

23 dBm

– ~4% added EVM up to 20 dBm for 54 Mbps

802.11g signal

– Meets 802.11b ACPR requirement up to 22.5

dBm

•

High power-added efficiency/Low operating

current for both 802.11b/g applications

•

•

Low idle current

•

High-speed power-up/-down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/-down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB power variation between 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

Excellent On-chip power detection

– <+/- 0.5dB variation between 0°C to +85°C

– <+/- 0.3dB variation Ch1 through Ch14

•

20 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 16-contact VQFN – 3mm x 3mm

•

All non-Pb (lead-free) devices are RoHS compliant

APPLICATIONS:

•

WLAN (IEEE 802.11b/g)

•Home RF

•

Cordless phones

•

2.4 GHz ISM wireless equipment

PRODUCT DESCRIPTION

The SST12LP14C is a versatile power amplifier based on

the highly-reliable InGaP/GaAs HBT technology.

The SST12LP14C can be easily configured for high-power

applications with good power-added efficiency (PAE) while

operating over the 2.4- 2.5 GHz frequency band. It typically

dBm for 802.11b.

This power amplifier has excellent linearity, typically ~4%

added EVM at 20 dBm output power. This is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask up to 23 dBm.

The SST12LP14C also features easy board-level usage

along with high-speed power-up/-down control through a

single combined reference voltage pin. Ultra-low reference

lable by an on/off switching signal directly from the base-

band chip. These features coupled with low operating

current make the this device ideal for the final stage power

amplification in battery-powered 802.11b/g WLAN transmit-

ter applications.

This power amplifier has an excellent on-chip and single-

ended power detector, which features a wide range

(>15 dB) with dB-wise linearization and high stability over

temperature (+/-0.5 dB 0°C to +85°C), and over frequency

(<+/-0.3 dB across Channels 1 through 14). The on-chip

power detector provides a reliable solution to board-level

power control.

The SST12LP14C is offered in 16-contact VQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP14C

SST-GP1214A2.4 GHz High Gain High Power PA