APT6013LFLL datasheet(1/5 Pages) ADPOW

部件名	APT6013LFLL

功能描述	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

PDF	5 Pages

Scroll/Zoom	100%

制造商	ADPOW [Advanced Power Technology]

网页	http://www.advpowertech.com

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1 / 5 page

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

T-MAX™

G

D

S

TO-264

B2FLL

LFLL

APT6013B2FLL

APT6013LFLL

600V 43A 0.130Ω

Ω

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

•

FAST RECOVERY BODY DIODE

Power MOS 7

® is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

® by significantly lowering R

DS(ON)

and Q

g. Power MOS 7

® combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

POWER MOS 7 R FREDFET

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250µA)

Drain-Source On-State Resistance 2 (V

GS = 10V, ID = 21.5A)

Zero Gate Voltage Drain Current (V

DS = 600V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 480V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Gate Threshold Voltage (V

DS = VGS, ID = 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J,TSTG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

600

0.130

250

1000

±100

35

APT6013B2LL_LLL

600

43

172

±30

±40

565

4.52

-55 to 150

300

43

50

2500

类似零件编号 - APT6013LFLL

制造商	部件名	数据表	功能描述
Advanced Power Technolo...	APT6013LFLL	71Kb / 2P	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Inchange Semiconductor ...	APT6013LFLL	299Kb / 2P	isc N-Channel MOSFET Transistor

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