(Preliminary)

PLL500-15/16

Low Phase Noise VCXO (1MHz to 18MHz)

47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 10/12/06 Page 4

4. Jitter and Phase Noise Specifications

PARAMETERS

CONDITIONS

MIN.

TYP.

MAX.

UNITS

RMS Period Jitter

(1 sigma – 1000 samples)

With capacitive decoupling between

VDD and GND.

2.5

ps

Phase Noise relative to carrier

18MHz @100Hz offset

-75

dBc/Hz

Phase Noise relative to carrier

18MHz @1kHz offset

-105

dBc/Hz

Phase Noise relative to carrier

18MHz @10kHz offset

-125

dBc/Hz

Phase Noise relative to carrier

18MHz @100kHz offset

-133

dBc/Hz

Phase Noise relative to carrier

18MHz @1MHz offset

-140

dBc/Hz

5. DC Specifications

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Supply Current, Dynamic,

with Loaded Outputs

Output load of 15pF

5

6

mA

Operating Voltage

2.25

3.63

V

Output Low Voltage at

CMOS level

0.4

V

Output High Voltage at

CMOS level

V

Output drive current

8

9.5

mA

VCXO Control Voltage

VCON

0

V

6. Crystal Specifications

PARAMETERS

SYMBOL

MIN.

TYP.

MAX.

UNITS

Crystal Resonator Frequency

16

36

MHz

Crystal Loading Rating (VCON = 1.65V)

8.5

pF

Maximum Sustainable Drive Level

200

µW

Operating Drive Level

50

µW

C0

5

pF

C0/C1

250

-

ESR

30

Ω

Note: The crystal must be such that it oscillates (parallel resonant) at nominal frequency when presented a C Load as specified above.

If the crystal requires more load to be at nominal frequency, the additional load must be added externally. This however may reduce the pull range.