IXTH76P10T datasheet(1/2 Pages) ISC

部件名	IXTH76P10T

功能描述	Trench P-Channel MOSFET

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

ISF1235

eq IXTH76P10T

Trench P-Channel MOSFET

www.iscsemi.com

1

FEATURES

· Drain Current -ID= -76A@ TC=25℃

· Drain Source Voltage -VDSS= -100V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 25mΩ(Max)@VGS= -10V

APPLICATIONS

· High-Side Switching

· Battery Charger Applications

· DC Choppers

· Automatic Test Equipment

· Current Regulators

ABSOLUTE MAXIMUM RATINGS

(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage-Continuous

±

15

V

ID

Drain Current-Continuous

-76

A

IDM

Drain Current-Single Pulse

-230

A

PD

Total Dissipation @TC=25℃

298

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.42

℃

/W

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