Static Characteristics

Source-Drain Diode Characteristics

Dynamic Characteristics

APT41H50B_S

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

µA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

µC

A

V/ns

Min

Typ

Max

500

0.60

0.12

0.15

3

4

5

-10

250

1000

±100

Min

Typ

Max

32

6810

90

735

425

215

170

38

80

29

35

80

26

Min

Typ

Max

41

135

1.0

215

370

0.90

2.6

8.6

12.7

30

Test Conditions

V

Reference to 25°C, I

V

V

V

T

V

T

V

Test Conditions

V

V

f = 1MHz

V

V

V

Resistive Switching

V

R

6

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

T

T

I

3

T

di

T

V

T

T

I

T

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

V

BR(DSS)

∆V

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt