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DF02S 数据表(PDF) 2 Page - ON Semiconductor |
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DF02S 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() DF005S − DF10S www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (Note 3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit DF005S DF01S DF02S DF04S DF06S DF08S DF10S VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V VDC DC Reverse Voltage at Rated IR 50 100 200 400 600 800 1000 V IF(AV) Average Rectified Forward Current at TA = 40°C 1.5 A IFSM Non−Repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine Wave 50 A TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 3.1 W RθJA Thermal Resistance, Junction−to−Ambient Single−Die Measurement (Note 1) (Maximum Land Pattern: 13 x 13 mm) 62 °C/W Multi−Die Measurement (Note 2) (Maximum Land Pattern: 13 x 13 mm) 50 Multi−Die Measurement (Note 2) (Minimum Land Pattern: 1.3 x 1.5 mm) 105 ψJL Thermal Characterization Parameter, Junction to Lead Single−Die Measurement (Note 2) (Maximum and Minimum Land Pattern) 27 °C/W 1. Device mounted on PCB with 0.5 inch x 0.5 inch (13 mm x 13 mm). Minimum Pads of 2 oz Copper. 2. The thermal resistances (RθJA & ψJL) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Heating effect from adjacent dice is considered and only tow dices are powered at the same time. F F S S F F S S Figure 1. Maximum pads of 2 oz copper Figure 2. Minimun pads of 2 oz copper ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage, per Element IF = 1.5 A − − 1.1 V IR Reverse Current, per Element at Rated VR TA = 25°C − − 5.0 mA TA = 125_C − − 500 I2t Rating for Fusing (t < 8.35 ms) − − − 10 A2s CJ Typical Capacitance, per Leg VR = 4.0 V, f = 1.0 MHz − 25 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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