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APT6010B2LL 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APT6010B2LL
功能描述  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT6010B2LL 数据表(HTML) 4 Page - Microsemi Corporation

  APT6010B2LL Datasheet HTML 1Page - Microsemi Corporation APT6010B2LL Datasheet HTML 2Page - Microsemi Corporation APT6010B2LL Datasheet HTML 3Page - Microsemi Corporation APT6010B2LL Datasheet HTML 4Page - Microsemi Corporation APT6010B2LL Datasheet HTML 5Page - Microsemi Corporation  
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APT6010B2_LLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
1
10
100
600
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Crss
Coss
Ciss
TJ =+150°C
TJ =+25°C
220
100
10
1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100µS
VDS=300V
VDS=120V
VDS=480V
I
D = 54A
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10 15 20 25 30
35 40 45 50
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
V
DD = 400V
I
D = 54A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0



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