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APT8024B2FLL 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APT8024B2FLL
功能描述  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT8024B2FLL 数据表(HTML) 4 Page - Microsemi Corporation

  APT8024B2FLL Datasheet HTML 1Page - Microsemi Corporation APT8024B2FLL Datasheet HTML 2Page - Microsemi Corporation APT8024B2FLL Datasheet HTML 3Page - Microsemi Corporation APT8024B2FLL Datasheet HTML 4Page - Microsemi Corporation APT8024B2FLL Datasheet HTML 5Page - Microsemi Corporation  
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background image
APT8024B2_LFLL
Eon
Eoff
V
DD = 533V
R
G = 5Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
20,000
10,000
1,000
100
200
100
10
1
1
10
100
800
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
127
50
10
5
1
16
12
8
4
0
10mS
1mS
100µS
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=400V
VDS=160V
VDS=640V
I
D = 31A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5Ω
T
J = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
tr
tf
0
10
20
30
40
50
0
10
20
30
40
50
5
10
15
2025
303540
45 50
0
5
10 15 20 25 3035 40 45 50
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD = 533V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 533V
I
D = 31A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.



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