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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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APTC60DAM18CTG 数据表(PDF) 2 Page - Microsemi Corporation |
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APTC60DAM18CTG 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page  APTC60DAM18CTG www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 71.5A 18 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 4mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28 Coss Output Capacitance 10.2 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.85 nF Qg Total gate Charge 1036 Qgs Gate – Source Charge 116 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 143A 444 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A RG = 1.2Ω 84 ns Eon Turn-on Switching Energy 1608 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 3920 µJ Eon Turn-on Switching Energy 2630 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 4824 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 0.5 2 IRM Maximum Reverse Leakage Current VR=600V Tj = 175°C 1 10 mA IF DC Forward Current Tc = 125°C 100 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage IF = 100A Tj = 175°C 2.0 2.4 V QC Total Capacitive Charge IF = 100A, VR = 300V di/dt =2400A/µs 140 nC f = 1MHz, VR = 200V 650 C Total Capacitance f = 1MHz, VR = 400V 500 pF |
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