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PI0512WS 数据表(PDF) 8 Page - AMI SEMICONDUCTOR |
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PI0512WS 数据表(HTML) 8 Page - AMI SEMICONDUCTOR |
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8 / 8 page ![]() PI0512WS Page 8 of 8 – July 26, 2001 Electro-Optical Characteristics (25 oC) Table 4 lists the electro-optical characteristics of PI0512WS sensor chip at 25 oC. Table 4. Electro-optical characteristics. Parameters Symbol Min Typical Max Units Center-to-center spacing 50 µm Aperture width 2500 µm Pixel area A 1.25 ×10-3 cm 2 Fill factor 1 FF 76 % Quantum efficiency 1,2 QE 75 % Responsivity 1,2 R 3.3 ×10-4 C/J/cm 2 Nonuniformity of response 3 2 5 +/-% Saturation exposure 2 Esat 180 nJ/cm 2 Saturation charge Qsat 55 60 pC Average dark current 4 1 3 pA Spectral response peak λ 600 nm Spectral response range 5 180 – 1000 nm Notes: (1) Fill factor, quantum efficiency, and responsivity are related by the equation R = (qe λ/hc).QE.FF.A, where q e is the charge of an electron and hc/ λ is the energy of a photon at a given wavelength. (2) At wavelength of 575 nm (yellow-green) and with no window. (3) Measured at 50% Vsat with incandescent tungsten lamp filtered with a Schott KG-1 (4) Max dark leakage ≤ 1.5 x average dark leakage measured with an integration period of 500 ms at 25 oC. (5) From 250-1000 nm, responsivity ≥ 20% of its peak value. heat-absorbing glass. ©2001 AMI Semiconductor. Printed in USA. All rights reserved. Specifications are subject to change without notice. Contents may not be reproduced in whole or in part without the express prior written permission of AMIS. Information furnished herein is believed to be accurate and reliable. However, no responsibility is assumed by AMIS for its use nor for any infringement of patents or other rights granted by implication or otherwise under any patent or patent rights of AMIS. |
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