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2SC6082B 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC6082B
功能描述  Silicon NPN Power Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC6082B 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC6082B Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC6082B Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC6082B Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Silicon NPN Power Transistor
2SC6082B
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA, IE= 0
60
--
--
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA; IB= 0
50
--
--
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
5
--
--
V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
--
--
10
uA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
--
--
10
uA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7.5A; IB= 375mA
--
--
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 7.5A; IB= 375mA
--
--
1.2
V
hFE-1
DC Current Gain
IC= 330mA; VCE= 2V
200
--
560
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
50
--
--
tstg
Storage Time
IC= 5A, IB1= 0.25A; IB2= -0.25A
--
575
--
ns
tf
Fall Time
--
39
--
ns
TYPICAL CHARACTERISTICS (TJ= 25ºC, unless otherwise noted)
Figure 1. IC-VCE
VCE.Collector-Emitter Voltage（V）
IC. Collector Current (A)
Figure 2. hFE-IC



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