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STISO621 数据表(PDF) 6 Page - STMicroelectronics

部件名 STISO621
功能描述  Dual channel digital isolator
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STISO621 数据表(HTML) 6 Page - STMicroelectronics

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Isolation characteristics
Table 6. Isolation specifications
Parameter
Symbol
Conditions
Value
Unit
SO8-W
SO8-N
Clearance
(Minimum external air gap)
CLR
Measured from input terminals to output
terminals, shortest distance through air
8
4
mm
Creepage
(Minimum external tracking)
CPG
Measured from input terminals to output
terminals, shortest distance path along body
8
4
mm
Comparative Tracking Index
(Tracking resistance)
CTI
DIN IEC 112/VDE 0303 Part 1
≥ 400
≥ 400
V
Isolation Group
Material Group
(DIN VDE 0110, 1/89, Table 1)
II
II
Table 7. Isolation characteristics
Parameter
Symbol
Test Conditions
Characteristic
Unit
SO8-W
SO8-N
Maximum repetitive isolation voltage
VIORM
AC voltage (bipolar)
1200
1200
VPEAK
Maximum working isolation voltage
VIOWM
AC voltage (sine wave); time-
dependent dielectric breakdown
(TDDB) test
849
849
VRMS
Input to output test voltage (1)
VPR
Method a, type test
VPR = VIORM × 1.6, tm= 10 s
Partial discharge < 5 pC
1920
1920
VPEAK
Method b, 100 % production
test
VPR = VIORM × 1.875, tm = 1 s
Partial discharge < 5 pC
2250
2250
VPEAK
Isolation withstand voltage(2)
VISO
1min (type test)
3536 / 5000
2828 /
4000
VRMS
VPEAK
Isolation test voltage(2)
VISOtest
1sec (100% production)
6000
4800
VPEAK
Transient overvoltage
(Highest allowable overvoltage)
VIOTM
tini= 60 s
Type test
6000
4800
VPEAK
Maximum surge isolation Voltage
VIOSM
Type test
6000
4800
VPEAK
Isolation resistance
RIO
VIO = 500 V at TS
Type test
>109
>109
1. Test performed in accordance with VDE 0884-10.
2. Test performed in accordance with UL 1577.
Note:
For three-phase systems the values in the table refer to the line-to-neutral voltage.
STISO621
Isolation characteristics
DS13394 - Rev 4
page 6/21



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