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PCFF45H120SWF 数据表(PDF) 2 Page - ON Semiconductor |
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PCFF45H120SWF 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() PCFF45H120SWF www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage VRRM 1200 V DC Forward Current, limited by TJ max (Note 1) IF 45 A Pulsed Forward Current, tp limited by TJ max (Note 2) IFM 135 A Operating Junction Temperature TJ −40 to +175 °C Storage Temperature Range Tstg +18 to +28 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nominal forward current at Tc = 100°C when assembled in power module 2. Not subject to production test – verified by design/characterization. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS (Tested on Wafers) Breakdown Voltage VBR IR = 1 mA 1200 − − V Reverse Leakage Current IR VR = 1200 V − − 10 mA Forward Voltage VF IF = 45 A − 1.78 2.08 V ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization) Breakdown Voltage VBR IR = 1 mA TJ = −40°C 1200 − − V Forward Voltage VF IF = 45 A TJ = 175°C − 1.9 − V Reverse Recovery Time Trr IF = 45 A, VR = 600 V, dIF/dt = 500 A/ms, TJ = 25°C − 244.9 − nS Reverse Recovery Charge Qrr − 2469 − nC Reverse Recovery Current IRRM − 20.2 − A Reverse Recovery Time Trr IF = 45 A, VR = 600 V, dIF/dt = 500 A/ms, TJ = 175°C − 376.5 − nS Reverse Recovery Charge Qrr − 5407 − nC Reverse Recovery Current IRRM − 28.8 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: Switching characteristics and thermal properties are depending strongly on module design and mounting technology. |
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