DATA SHEET

www.onsemi.com

© Semiconductor Components Industries, LLC, 2018

June, 2024 − Rev. 5

1

Publication Order Number:

S3MB/D

Rectifiers, Surface Mount

3A, 50 V-1000 V

S3AB-S3MB

Features

• Glass Passivated Chip Junction

• High Surge Current Capacity

• Low Forward Voltage: 1.15 V Maximum

• UL Flammability 94V−0 Classification

• MSL 1 per J−STD−020

• RoHS Compliant / Green Molding Compound

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free and Halide Free Devices

ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

S3AB

S3BB

S3DB S3GB

S3JB

S3KB S3MB

VRRM

Repetitive Peak Reverse Voltage

50

100

200

400

600

800

1000

V

VRMS

RMS Reverse Voltage

35

70

140

280

420

560

700

V

VR

DC Blocking Voltage

50

100

200

400

600

800

1000

A

IF(AV)

Average Forward Rectified Current

3

A

IFSM

Peak Forward Surge Current: 8.3 ms Single

Half Sine−Wave Superimposed on Rated Load

80

A

TJ

Operating Junction Temperature Range

−55 to 150

°C

TSTG

Storage Temperature Range

−55 to 150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. (Note 1)

Symbol

Parameter

Value

Unit

RqJA

Typical Thermal Resistance, Junction−to−Ambient

148

°C/W

YJL

Typical Thermal Characteristics, Junction−to−Lead

14

°C/W

1. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm per JESD51−3.

ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VF

Instantaneous Forward Voltage (Note 2)

IF = 3 A

−

−

1.15

V

IR

Reverse Current at Rated VR

TJ = 25°C

−

−

10

mA

TJ = 125°C

−

−

250

trr

Reverse Recovery Time

IF = 0.5 A, IR = 1 A, Irr = 0.25 A

−

1.5

−

ms

CJ

Junction Capacitance

VR = 4 V, f = 1 MHz

−

40

−

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse test with PW = 300 ms, 1% duty cycle.

MARKING

DIAGRAM

1

Cathode

2

Anode

Z

= Assembly Plant Code

Y

= Year

WW

= Work Week

S3xB

= Specific Device Code

x = A, B, D, G, J, K, M

ZYWW

S3xB

SMB

CASE 403AF

Polarity

Mark

See detailed ordering and shipping information on page 3

of this data sheet.

NOTE: Some of the devices on this data sheet have been

DISCONTINUED. Please refer to the table on page 3.

ORDERING INFORMATION