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NRVS3JB 数据表(PDF) 3 Page - ON Semiconductor |
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NRVS3JB 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 5 page ![]() S3AB−S3MB www.onsemi.com 3 TEST CIRCUIT DIAGRAM Oscilloscope (Note 3) Pulse Generator (Note 4) (+) 50 Vdc (approx) (−) 1 W Non Inductive Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram 50 W Noninductive 100 W Noninductive DUT (−) (+) +0.5 A −0.25 A −1.0 A 0 trr NOTES: 3. Rise Time = 7 ns max. Input Impedance = 1 MW, 22 pF 4. Rise Time = 10 ns max. Source Impedance = 50 W, 22 pF ORDERING INFORMATION Part Number Device Code Marking Package Shipping† NRVS3BB* S3BB SMB (Pb−Free, Halide−Free) 3000 / Tape & Reel S3DB S3DB S3GB, NRVS3GB* S3GB S3JB, NRVS3JB* S3JB S3KB S3KB S3MB, NRVS3MB* S3MB DISCONTINUED (Note 5) S3AB, NRVS3AB* S3AB SMB (Pb−Free, Halide−Free) 3000 / Tape & Reel S3BB S3BB NRVS3DB* S3DB NRVS3KB* S3KB †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 5. DISCONTINUED: These devices are not recommended for new design. Please contact your onsemi representative for information. The most current information on these devices may be available on www.onsemi.com. |
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