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IXFN82N60P 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IXFN82N60P
功能描述  N-Channel MOSFET Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IXFN82N60P 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  IXFN82N60P Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN82N60P Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN82N60P Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1240
eq IXFN82N60P
N-Channel MOSFET Transistor
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =3mA
600
-
-
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =8mA
3.0
-
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID= 41A
-
-
75
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
-
-
±200
nA
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
-
-
50
μ
A
VSD
Diode Forward Voltage
ISD= 82A, VGS= 0V
-
-
1.5
V
PACKAGE OUTLINE (UNIT: mm)



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