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SCS215AGC 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SCS215AGC 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCD7025 eq SCS215AGC SiC Schottky Barrier Diode www.iscsemi.com 1 FEATURES · Reduced Temperature Dependence · High-speed Switching Possible · Shorter Recovery Time APPLICATIONS · Secondary Side Rectification · PFC Boost Topology · Data Center ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitisve Peak Reverse Voltage 650 V IF Continuous Forward Current Tc=134℃ 15 A IFSM Non-Repetitive Forward Surge Current tp=10ms Sinusoidal, TJ=25℃ 52 A tp=10ms Sinusoidal, TJ=150℃ 41 tp=10us Square, TJ=25℃ 200 IFRM Repetitive Peak Forward Surge Current 65 A I2t I2t For Fusing tp=10ms, TJ=25℃ 14 A2s tp=10ms, TJ=150℃ 8.5 Ptot Power Dissipation Tc=25°C 110 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.3 ℃ /W |
类似零件编号 - SCS215AGC |
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类似说明 - SCS215AGC |
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