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ISC044N15NM6 数据表(PDF) 1 Page - Infineon Technologies AG

部件名 ISC044N15NM6
功能描述  MOSFET OptiMOS™ 6 Power‑Transistor, 150 V
PDF  13 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

ISC044N15NM6 数据表(HTML) 1 Page - Infineon Technologies AG

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Datasheet
1
Revision 2.0
https://www.infineon.com
2024‑04‑23
MOSFET
OptiMOS™ 6 Power‑Transistor, 150 V
Features
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1        Key Performance Parameters
Parameter
Value
Unit
V
150
V
R
4.4
mΩ
I
156
A
Q
163
nC
Q
55
nC
Q  (500 A/μs)
137
nC
PG‑TSON‑8
Type/Ordering Code
Package
Marking
Related Links
ISC044N15NM6
PG‑TSON‑8
04415N6
‑
N‑channel, normal level
• 
Very low on‑resistance R
• 
DS(on)
Superior thermal resistance
• 
100% avalanche tested
• 
Pb‑free lead plating; RoHS compliant
• 
Halogen‑free according to IEC61249‑2‑21
• 
MSL 1 classified according to J‑STD‑020
• 
DS
DS(on),max
D
oss
G
rr
 
 
Public
ISC044N15NM6
Final datasheet
1
2
3
4
7
6
5
8
Drain
Pin 5-8
Gate
Pin 4
Source
Pin 1-3
*1
*1: Internal body diode


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