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APTGT200DH120G 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APTGT200DH120G
功能描述  Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
PDF  5 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGT200DH120G 数据表(HTML) 2 Page - Microsemi Corporation

  APTGT200DH120G Datasheet HTML 1Page - Microsemi Corporation APTGT200DH120G Datasheet HTML 2Page - Microsemi Corporation APTGT200DH120G Datasheet HTML 3Page - Microsemi Corporation APTGT200DH120G Datasheet HTML 4Page - Microsemi Corporation APTGT200DH120G Datasheet HTML 5Page - Microsemi Corporation  
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APTGT200DH120G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
350
µA
Tj = 25°C
1.4
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 200A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 3 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
14
Coes
Output Capacitance
0.8
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.6
nF
Td(on)
Turn-on Delay Time
260
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω
70
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω
90
ns
Eon
Turn on Energy
Tj = 125°C
20
Eoff
Turn off Energy
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω
Tj = 125°C
20
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
600
µA
IF
DC Forward Current
Tc = 80°C
200
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
170
trr
Reverse Recovery Time
Tj = 125°C
280
ns
Tj = 25°C
18
Qrr
Reverse Recovery Charge
Tj = 125°C
36
µC
Tj = 25°C
10
Er
Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =2500A/µs
Tj = 125°C
18
mJ



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