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STP7NK80Z 数据表(PDF) 3 Page - STMicroelectronics |
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STP7NK80Z 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1 Electrical ratings 3/18 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 / D²PAK I²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 800 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 5.2 5.2 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC = 100°C 3.3 3.3 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 20.8 20.8(1) A PTOT Total dissipation at TC = 25°C 125 30 W Derating factor 1 0.24 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V dv/dt (3) 3. ISD ≤5.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) -- 2500 V Tj Tstg Max operating junction temperature Storage temperature -55 to 150 °C °C Table 2. Thermal data Symbol Parameter Value Unit TO-220/D2PAK I2PAK TO-220FP Rthj-case Thermal resistance junction-case max 1 4.2 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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