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数据搜索系统，热门电子元器件搜索 |
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APTM10TAM09FPG 数据表(PDF) 2 Page - Microsemi Corporation |
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APTM10TAM09FPG 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM10TAM09FPG www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 69.5A 9 10 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 9875 Coss Output Capacitance 3940 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 1470 pF Qg Total gate Charge 350 Qgs Gate – Source Charge 60 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID =139A 180 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 70 Td(off) Turn-off Delay Time 95 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A RG = 5Ω 125 ns Eon Turn-on Switching Energy 552 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 604 µJ Eon Turn-on Switching Energy 608 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω 641 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 139 IS Continuous Source current (Body diode) Tc = 80°C 100 A VSD Diode Forward Voltage VGS = 0V, IS = - 139A 1.3 V dv/dt Peak Diode Recovery 8 V/ns Tj = 25°C 190 trr Reverse Recovery Time Tj = 125°C 370 ns Tj = 25°C 0.4 Qrr Reverse Recovery Charge IS = - 139A VR = 66V diS/dt = 100A/µs Tj = 125°C 1.7 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 139A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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