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APTM20DHM20TG 数据表(PDF) 6 Page - Microsemi Corporation

部件名 APTM20DHM20TG
功能描述  Asymmetrical - Bridge MOSFET Power Module
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM20DHM20TG 数据表(HTML) 6 Page - Microsemi Corporation

  APTM20DHM20TG Datasheet HTML 1Page - Microsemi Corporation APTM20DHM20TG Datasheet HTML 2Page - Microsemi Corporation APTM20DHM20TG Datasheet HTML 3Page - Microsemi Corporation APTM20DHM20TG Datasheet HTML 4Page - Microsemi Corporation APTM20DHM20TG Datasheet HTML 5Page - Microsemi Corporation APTM20DHM20TG Datasheet HTML 6Page - Microsemi Corporation  
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APTM20DHM20TG
www.microsemi.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
0
25
50
75
100
125
150
ID, Drain Current (A)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
ID, Drain Current (A)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
200
400
600
800
1000
1200
0
25
50
75
100
125
150
ID, Drain Current (A)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
250
500
750
1000
1250
1500
0
5
10 15 20 25 30 35 40
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=133V
ID=75A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
10
20
30
40
50
60
70
80
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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