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APTM50DAM38CTG 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APTM50DAM38CTG
功能描述  Boost chopper SiC FWD diode MOSFET Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50DAM38CTG 数据表(HTML) 2 Page - Microsemi Corporation

  APTM50DAM38CTG Datasheet HTML 1Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 2Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 3Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 4Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 5Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 6Page - Microsemi Corporation APTM50DAM38CTG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50DAM38CTG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 45A
38
45
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
11.2
Coss
Output Capacitance
2.36
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.18
nF
Qg
Total gate Charge
246
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A
130
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2Ω
77
ns
Eon
Turn-on Switching Energy
906
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
1452
µJ
Eon
Turn-on Switching Energy
1490
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
1692
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
300
1200
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
600
6000
µA
IF
DC Forward Current
Tc = 125°C
60
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 60A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 60A, VR = 300V
di/dt =1600A/µs
84
nC
f = 1MHz, VR = 200V
390
Q
Total Capacitance
f = 1MHz, VR = 400V
300
pF



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