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APTM50DDAM65T3G 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APTM50DDAM65T3G
功能描述  Dual Boost chopper MOSFET Power Module
PDF  6 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50DDAM65T3G 数据表(HTML) 2 Page - Microsemi Corporation

  APTM50DDAM65T3G Datasheet HTML 1Page - Microsemi Corporation APTM50DDAM65T3G Datasheet HTML 2Page - Microsemi Corporation APTM50DDAM65T3G Datasheet HTML 3Page - Microsemi Corporation APTM50DDAM65T3G Datasheet HTML 4Page - Microsemi Corporation APTM50DDAM65T3G Datasheet HTML 5Page - Microsemi Corporation APTM50DDAM65T3G Datasheet HTML 6Page - Microsemi Corporation  
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APTM50DDAM65T3G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
65
78
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7000
Coss
Output Capacitance
1400
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
90
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
40
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
70
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3Ω
93
ns
Eon
Turn-on Switching Energy
1035
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
845
µJ
Eon
Turn-on Switching Energy
1556
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1013
µJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
600
µA
IF
DC Forward Current
Tc = 70°C
80
A
Tj = 25°C
1.45
VF
Diode Forward Voltage
IF = 80A
Tj = 125°C
1.35
V
Tj = 25°C
95
trr
Reverse Recovery Time
Tj = 125°C
115
ns
Tj = 25°C
5.2
Qrr
Reverse Recovery Charge
IF = 80A
VR = 300V
di/dt=4500A/µs
Tj = 125°C
8
µC



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