UTT20N04

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 7

www.unisonic.com.tw

QW-R209-300.A



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

ID

20

A

Pulsed Drain Current

IDM

40

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

2.5

mJ

Power Dissipation

PD

2.8

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Ambient

θJA

62.5

°C/W

Junction to Case

θJC

44.6 (Note)

°C/W

Note: The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

40

V

Zero Gate Voltage Drain Current

IDSS

VDS=40V, VGS=0V

1

µA

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.0

3.0

V

VGS=10V, ID=10A

33

mΩ

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=10A

60

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

480

pF

Output Capacitance

COSS

92

pF

Reverse Transfer Capacitance

CRSS

VDS=20V, VGS=0V, f=1MHz

81

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

17

nC

Gate Source Charge

QGS

1.8

nC

Gate Drain Charge

QGD

VDS=20V, VGS=10V, ID=20A

IG=1mA

2.8

nC

Turn-ON Delay Time

tD(ON)

3.2

ns

Turn-ON Rise Time

tR

21

ns

Turn-OFF Delay Time

tD(OFF)

15

ns

Turn-OFF Fall-Time

tF

VGS=10V, VDS=20V, ID=20Ω,

RG=3Ω

22

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

20

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

40

A

Diode Forward Voltage

VSD

IS=20A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time

trr

IF=20A, dI/dt=100A/μs

28

ns

Body Diode Reverse Recovery Charge

Qrr

IF=20A, dI/dt=100A/μs

20

nC

Notes: 1. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.

2. The power dissipation is limited by 140°C junction temperature.