APTM100AM90FG

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2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

400

Zero Gate Voltage Drain Current

2000

µA

Drain – Source on Resistance

90

105

m

Ω

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±250

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

20.7

Output Capacitance

3.5

Reverse Transfer Capacitance

f = 1MHz

0.64

nF

Total gate Charge

744

Gate – Source Charge

96

Gate – Drain Charge

488

nC

Turn-on Delay Time

18

Rise Time

12

Turn-off Delay Time

155

Fall Time

Inductive switching @ 125°C

40

ns

Turn-on Switching Energy

3.6

Turn-off Switching Energy

Inductive switching @ 25°C

2.5

mJ

Turn-on Switching Energy

5.7

Turn-off Switching Energy

Inductive switching @ 125°C

3.1

mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

78

Continuous Source current

(Body diode)

Tc = 80°C

59

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

18

V/ns

320

Reverse Recovery Time

650

ns

14.4

Reverse Recovery Charge

38.9

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 700A/µs